Datasheet Details
| Part number | STPSC10H12 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 426.28 KB |
| Description | power Schottky silicon carbide diode |
| Datasheet |
 STPSC10H12 Datasheet
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| Part number | STPSC10H12 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 426.28 KB |
| Description | power Schottky silicon carbide diode |
| Datasheet |
STPSC10H12 Datasheet
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The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.