STPSC10H12 datasheet by STMicroelectronics.
| Part number | STPSC10H12 |
|---|---|
| Datasheet | STPSC10H12-STMicroelectronics.pdf |
| File Size | 426.28 KB |
| Manufacturer | STMicroelectronics |
| Description | power Schottky silicon carbide diode |
|
|
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
View all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| STPSC10H12-Y | Automotive grade 1200V power Schottky silicon carbide diode |
| STPSC10H12G2Y-TR | silicon carbide power Schottky diode |
| STPSC10H065 | power Schottky silicon carbide diode |
| STPSC10H065-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC10H065BY-TR | Schottky silicon carbide diode |
| STPSC10H065DLF | power Schottky silicon carbide diode |
| STPSC10H065G2 | high surge silicon carbide power Schottky diode |
| STPSC10065 | Schottky silicon carbide diode |
| STPSC10065DLF | power Schottky silicon carbide diode |
| STPSC1006D | 600 V power Schottky silicon carbide diode |
