STPSC10H12 Description
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
STPSC10H12 Key Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Operating from -40 °C to 175 °C
- Low VF
- ECOPACK®2 pliant