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CRXU15D120G3 Datasheet 1200V Silicon Carbide Schottky Diode

Manufacturer: CR Micro

Datasheet Details

Part number CRXU15D120G3
Manufacturer CR Micro
File Size 724.60 KB
Description 1200V Silicon Carbide Schottky Diode
Download CRXU15D120G3 Download (PDF)

General Description

This product family is CRM's third generation SiC JBS, with lower VF and offers state of the art performance.

It is designed for high frequency applications where high efficiency and high reliability are required.

It is qualified and manufactured on the productive 6 inch SiC line in China fully owned by CR MICRO.

Overview

CRXU15D120G3 Silicon Carbide Schottky Diode 1200 V, 15 A, 62 nC.

Key Features

  • Low conduction loss due to low VF.
  • Extremely low switching loss by tiny QC.
  • Highly rugged due to better surge current.
  • Industrial standard quality and reliability.