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CRXB08D065G3 Datasheet 650v Silicon Carbide Schottky Diode

Manufacturer: CR Micro

Overview: CRXB08D065G3 Silicon Carbide Schottky Diode 650 V, 8 A, 20 nC.

Datasheet Details

Part number CRXB08D065G3
Manufacturer CR Micro
File Size 646.34 KB
Description 650V Silicon Carbide Schottky Diode
Datasheet CRXB08D065G3-CRMicro.pdf

General Description

This product family is CRM's third generation SiC JBS, with lower VF and offers state of the art performance.

It is designed for high frequency applications where high efficiency and high reliability are required.

It is qualified and manufactured on the productive 6 inch SiC line in China fully owned by CR MICRO.

Key Features

  • Low conduction loss due to low VF.
  • Extremely low switching loss by tiny QC.
  • Highly rugged due to better surge current.
  • Industrial standard quality and reliability.

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