CRXD10D065G3
CRXD10D065G3 is 650V Silicon Carbide Schottky Diode manufactured by CR Micro.
Silicon Carbide Schottky Diode 650 V, 10 A, 25 nC
General Description
This product family is CRM's third generation SiC JBS, with lower VF and offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. It is qualified and manufactured on the productive 6 inch SiC line in China fully owned by CR MICRO.
Features
- Low conduction loss due to low VF
- Extremely low switching loss by tiny QC
- Highly rugged due to better surge current
- Industrial standard quality and reliability
Applications
- Server
- Tele
- High performance SMPS
- Power factor correction
Product Summary
VRRM IF (TC=161℃)
650...
