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CRXB30D120G2 Datasheet 1200v Silicon Carbide Schottky Diode

Manufacturer: CR Micro

Overview: CRXB30D120G2 Silicon Carbide Schottky Diode 1200 V, 30 A, 135 nC.

Datasheet Details

Part number CRXB30D120G2
Manufacturer CR Micro
File Size 815.54 KB
Description 1200V Silicon Carbide Schottky Diode
Datasheet CRXB30D120G2-CRMicro.pdf

General Description

This product family is CRM's second generation SiC JBS, with lower VF and offers state of the art performance.

It is designed for high frequency applications where high efficiency and high reliability are required.

It is qualified and manufactured on the productive 6 inch SiC line in China fully owned by CR MICRO.

Key Features

  • Low conduction loss due to low VF.
  • Extremely low switching loss by tiny QC.
  • Highly rugged due to better surge current.
  • Industrial standard quality and reliability.

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