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SCTW35N65G2V - Silicon carbide Power MOSFET

STMicroelectronics

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SCTW35N65G2V silicon carbide power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	SCTW35N65G2V
Manufacturer	STMicroelectronics
File Size	200.35 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTW35N65G2V Datasheet

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

Overview

SCTW35N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 55 mΩ typ.

Key Features

Order code VDS RDS(on) max. ID SCTW35N65G2V 650 V 67 mΩ 45 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200°C).

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