STMicroelectronics SCTW35N65G2V
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.| Part No. | SCTW35N65G2V |
|---|---|
| Datasheet | SCTW35N65G2V Download |
| Manufacturer |  STMicroelectronics |
| Description | Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID SCTW35N65G2V 650 V 67 mΩ 45 A● Very fast and robust intrinsic body diode
● Extremely low gate charge and input capacitance
● Very high operating junction temperature capability (TJ = 200°C)
APPLICATIONS
● Switching mode power supply● DC-DC converters
● Industrial motor control
DESCRIPTION
The variation of switching loss is almost independent of junction temperature. Product status link SCTW35N65G2V Product summary Order code SCTW35N65G2V Marking SCTW35N65G2V Package HiP247 Packing Tube DS12076 - Rev 5 - January 2021 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating range) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
