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SCTW35N65G2V

Manufacturer: STMicroelectronics
SCTW35N65G2V datasheet preview

Datasheet Details

Part number SCTW35N65G2V
Datasheet SCTW35N65G2V-STMicroelectronics.pdf
File Size 200.35 KB
Manufacturer STMicroelectronics
Description Silicon carbide Power MOSFET
SCTW35N65G2V page 2 SCTW35N65G2V page 3

SCTW35N65G2V Overview

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTW35N65G2V Key Features

  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200°C)
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