STMicroelectronics SCTW35N65G2VAG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.| Part No. | SCTW35N65G2VAG |
|---|---|
| Datasheet | SCTW35N65G2VAG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code SCTW35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 D(2, TAB) G(1) S(3) 3 2 1● AEC-Q101 qualified
● Very fast and robust intrinsic body diode
● Low capacitance
APPLICATIONS
● Switching mode power supply● EV chargers
● DC-DC converters AM01475v1_noZen
DESCRIPTION
The variation of switching loss is almost independent of junction temperature. Product status link SCTW35N65G2VAG Product summary Order code SCTW35N65G2VAG Marking SCT35N65G2VAG Package HiP247 Packing Tube DS12885 - Rev 3 - September 2020 For further information contact your local STMicroelectronics sales office. SCTW35N65G2VAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating range) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
