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SCTW35N65G2VAG - Automotive-grade silicon carbide Power MOSFET

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General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

Overview

SCTW35N65G2VAG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ.

Key Features

  • Order code SCTW35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 D(2, TAB) G(1) S(3) 3 2 1.
  • AEC-Q101 qualified.
  • Very fast and robust intrinsic body diode.
  • Low capacitance.

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