Datasheet4U Logo Datasheet4U.com

SCTW100N65G2AG - silicon carbide Power MOSFET

📥 Download Datasheet

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

Overview

SCTW100N65G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ.

Key Features

  • Order code SCTW100N65G2AG VDS 650 V RDS(on) max. 26 mΩ ID 100 A HiP247 3 2 1.
  • AEC-Q101 qualified.
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitance.
  • Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB).

More Datasheets from STMicroelectronics

Part Number Description
SCTW100N120G2AG Automotive-grade silicon carbide Power MOSFET
SCTW35N65G2V Silicon carbide Power MOSFET
SCTW35N65G2VAG Automotive-grade silicon carbide Power MOSFET
SCTW40N120G2V Silicon carbide Power MOSFET
SCTW40N120G2VAG Automotive-grade silicon carbide Power MOSFET
SCTW60N120G2 Silicon carbide Power MOSFET
SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET
SCTW90N65G2V Silicon carbide Power MOSFET
SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET
SCTWA35N65G2VAG Automotive-grade silicon carbide Power MOSFET