Datasheet Summary
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 100 A in an HiP247 package
Features
Order code SCTW100N65G2AG
VDS 650 V
RDS(on) max. 26 mΩ
ID 100 A
HiP247
3 2 1
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
D(2, TAB)
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
G(1) S(3)
AM01475v1_noZen
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device...