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SCTW100N65G2AG - silicon carbide Power MOSFET

Product Overview

STMicroelectronics

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SCTW100N65G2AG silicon carbide Power MOSFET by STMicroelectronics - Datasheet Preview — Datasheet preview – SCTW100N65G2AG

Datasheet Details

Part number	SCTW100N65G2AG
Manufacturer	STMicroelectronics
File Size	227.69 KB
Description	silicon carbide Power MOSFET
Datasheet	SCTW100N65G2AG Datasheet
Additional preview pages of the SCTW100N65G2AG datasheet.

Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code SCTW100N65G2AG VDS 650 V RDS(on) max. 26 mΩ ID 100 A HiP247 3 2 1.
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB).

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Published: Mar 24, 2020 |