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SCTW40N120G2VAG

Manufacturer: STMicroelectronics
SCTW40N120G2VAG datasheet preview

Datasheet Details

Part number SCTW40N120G2VAG
Datasheet SCTW40N120G2VAG-STMicroelectronics.pdf
File Size 227.29 KB
Manufacturer STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET
SCTW40N120G2VAG page 2 SCTW40N120G2VAG page 3

SCTW40N120G2VAG Overview

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTW40N120G2VAG Key Features

  • AEC-Q101 qualified
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)
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