• Part: SCTW40N120G2VAG
  • Description: Automotive-grade silicon carbide Power MOSFET
  • Manufacturer: STMicroelectronics
  • Size: 227.29 KB
Download SCTW40N120G2VAG Datasheet PDF
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SCTW40N120G2VAG Key Features

  • AEC-Q101 qualified
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)

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