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SCTW40N120G2VAG - Automotive-grade silicon carbide Power MOSFET

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General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

Overview

SCTW40N120G2VAG Datasheet Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ.

Key Features

  • Order code SCTW40N120G2VAG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247 3 2 1.
  • AEC-Q101 qualified.
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitance.
  • Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB).

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