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SCTW40N120G2V - Silicon carbide Power MOSFET

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General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

Overview

SCTW40N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ.

Key Features

  • Order code VDS RDS(on)max. ID SCTW40N120G2V 1200 V 100 mΩ 36 A.
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitance.
  • Very high operating junction temperature capability (TJ = 200 °C).

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