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SCTW100N120G2AG

Manufacturer: STMicroelectronics
SCTW100N120G2AG datasheet preview

Datasheet Details

Part number SCTW100N120G2AG
Datasheet SCTW100N120G2AG-STMicroelectronics.pdf
File Size 212.57 KB
Manufacturer STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET
SCTW100N120G2AG page 2 SCTW100N120G2AG page 3

SCTW100N120G2AG Overview

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTW100N120G2AG Key Features

  • AEC-Q101 qualified
  • High speed switching performance
  • Very fast and robust intrinsic body diode
  • Low capacitances
  • Very high operating junction temperature capability (TJ = 200 °C)

SCTW100N120G2AG Applications

  • Traction for inverters
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