SCTW100N120G2AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCTW100N120G2AG
Manufacturer	STMicroelectronics
File Size	212.57 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTW100N120G2AG Datasheet

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

SCTW100N120G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mΩ (typ.

Order code SCTW100N120G2AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A HiP247 D(2, TAB) G(1) S(3) 3 2 1.
AEC-Q101 qualified.
High speed switching performance.
Very fast and robust intrinsic body diode.
Low capacitances.
Very high operating junction temperature capability (TJ = 200 °C).

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