SCTW100N120G2AG Key Features
- AEC-Q101 qualified
- High speed switching performance
- Very fast and robust intrinsic body diode
- Low capacitances
- Very high operating junction temperature capability (TJ = 200 °C)
| Part Number | Description |
|---|---|
| SCTW100N65G2AG | silicon carbide Power MOSFET |
| SCTW35N65G2V | Silicon carbide Power MOSFET |
| SCTW35N65G2VAG | Automotive-grade silicon carbide Power MOSFET |
| SCTW40N120G2V | Silicon carbide Power MOSFET |
| SCTW40N120G2VAG | Automotive-grade silicon carbide Power MOSFET |