WNSC2M1K0170J
description
Silicon Carbide MOSFET in a TO3PF plastic package, designed for high frequency, high efficiency systems.
Ro HS halogen-Free
2. Features and benefits
- Optimized for fly-back topologies
- 15V/0V gate-source voltage patible with fly-back controllers
- 100% UIS Tested
- Controllable d V/dt for optimized EMI
- Reduced cooling requirements
- Enlarge creepage distance
- Ro HS pliant
3. Applications
- Auxiliary Power Supplies
- Switch Mode Power Supplies
- Solar Inverter
- Frequency converter
- Industrial power supply
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Absolute maximum rating
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Symbol Parameter
Static characteristics
RDS(on) drain-source on-state resistance
Dynamic characteristics
Conditions
25 °C ≤ Tj ≤ 175 °C VGS = 18 V; Tmb = 25 °C Tmb = 25 °C
Conditions
VGS = 15 V; ID = 1 A; Tj = 25 °C
QG(tot) total gate charge
QGD gate-drain...
