WNSC2M1K0170B7-A
description
Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems. h Ro HS alogen-Free
- Q101 Qualified
2. Features and benefits
- Low on-resistance
- Fast switching speed
- 0V turn-off gate voltage for simple gate drive
- Easy to parallel
- 100% UIS Tested
- Controllable d V/dt for optimized EMI
- Reduced cooling requirements
- Ro HS pliant
- AEC-Q101 qualified
3. Applications
- Switching mode power supplies
- HV capacitor discharge
- AUX power supply unit
- EV OBC/ MCU/ VCU/ Backup PSU
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Absolute maximum rating
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Symbol Parameter
Static characteristics
RDS(on) drain-source on-state resistance
Dynamic characteristics
Conditions
25 °C ≤ Tj ≤ 175 °C VGS = 18 V; Tmb = 25 °C Tmb = 25 °C
Conditions
VGS = 15 V; ID = 1 A; Tj = 25 °C
QG(tot) total gate...
