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WNSC2M1K0170B7-A - N-Channel Silicon Carbide MOSFET

General Description

Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

2.

Key Features

  • Low on-resistance.
  • Fast switching speed.
  • 0V turn-off gate voltage for simple gate drive.
  • Easy to parallel.
  • 100% UIS Tested.
  • Controllable dV/dt for optimized EMI.
  • Reduced cooling requirements.
  • RoHS compliant.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number WNSC2M1K0170B7-A
Manufacturer WeEn
File Size 799.11 KB
Description N-Channel Silicon Carbide MOSFET
Datasheet download datasheet WNSC2M1K0170B7-A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNSC2M1K0170B7-A N-Channel Silicon Carbide MOSFET Rev.01 - 10 April 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems. h RoHS alogen-Free AEC - Q101 Qualified 2. Features and benefits • Low on-resistance • Fast switching speed • 0V turn-off gate voltage for simple gate drive • Easy to parallel • 100% UIS Tested • Controllable dV/dt for optimized EMI • Reduced cooling requirements • RoHS compliant • AEC-Q101 qualified 3. Applications • Switching mode power supplies • HV capacitor discharge • AUX power supply unit • EV OBC/ MCU/ VCU/ Backup PSU 4. Quick reference data Table 1.