WNSC2M20120R Description
Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.
WNSC2M20120R Key Features
- Separate driver source pin
- Low on-resistance
- Fast switching speed
- 0V turn-off gate voltage for simple gate drive
- 100% UIS Tested
- Easy to parallel
- Controllable dV/dt for optimized EMI
- Reduced cooling requirements
- RoHS pliant