WNSC2M20120B7 Description
Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.
WNSC2M20120B7 Key Features
- Low on-resistance
- Fast switching speed
- 0V turn-off gate voltage for simple gate drive
- 100% UIS Tested
- Easy to parallel
- Controllable dV/dt for optimized EMI
- Reduced cooling requirements
- RoHS pliant