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WNSC2M20065B7 - N-Channel Silicon Carbide MOSFET

Description

Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

2.

Features

  • Kelvin source configuration.
  • Low specific on-resistance.
  • Optimized dynamic performance.
  • Robust gate design.
  • 0V turn-off VGS for simple gate driving.
  • 100% UIS Tested.
  • Easy to parallel.
  • RoHS compliant Lead-Free 3.

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Datasheet Details

Part number WNSC2M20065B7
Manufacturer WeEn
File Size 866.23 KB
Description N-Channel Silicon Carbide MOSFET
Datasheet download datasheet WNSC2M20065B7 Datasheet

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Full PDF Text Transcription

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WNSC2M20065B7 N-Channel Silicon Carbide MOSFET Rev.01 - 12 October 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems. RoHS halogen-Free 2. Features and benefits • Kelvin source configuration • Low specific on-resistance • Optimized dynamic performance • Robust gate design • 0V turn-off VGS for simple gate driving • 100% UIS Tested • Easy to parallel • RoHS compliant Lead-Free 3. Applications • PC/server/telecom power supplies • UPS & Energy storage system • Battery formation instrument • PV MPPT and inverters • EV Charger • Motor Drives 4. Quick reference data Table 1.
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