WNSC2M20065R Description
Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.
WNSC2M20065R Key Features
- Kelvin source configuration
- Low specific on-resistance
- Optimized dynamic performance
- Robust gate design
- 0V turn-off VGS for simple gate driving
- 100% UIS Tested
- Easy to parallel
- RoHS pliant