WNSC2M20065TB
description
We En Gen-2 Silicon Carbide MOSFET in a TSPAK plastic package, featured with top side cooling structure, designed for high frequency, high efficiency systems.
2. Features and benefits
- Top side cooling structure
- Kelvin source configuration
- Low specific on-resistance
- Optimized dynamic performance
- Robust gate design
- 0V turn-off VGS for simple gate driving
- 100% UIS Tested
- Easy to parallel
- Ro HS pliant
Ro HS halogen-Free
3. Applications
- PC/server/tele power supplies
- UPS & Energy storage system
- Battery formation instrument
- PV MPPT and inverters
- EV Chargers
- Motor Drives
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Absolute maximum rating
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Symbol Parameter
Static characteristics
RDS(on) drain-source on-state resistance
Dynamic characteristics
Conditions
25 °C ≤ Tj ≤ 175 °C VGS = 18 V; Tmb = 25 °C Tmb = 25 °C, Tj =...
