Datasheet Summary
N-Channel Silicon Carbide MOSFET
Rev.01
- 18 November 2024
Product data sheet
1. General description
Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.
2. Features and benefits
- Top side cooling structure
- Kelvin source configuration
- Low specific on-resistance
- Optimized dynamic performance
- Robust gate design
- 0V turn-off VGS for simple gate driver
- 100% UIS Tested
- Easy to parallel
- RoHS pliant
RoHS halogen-Free
3. Applications
- Switching mode power supplies
- UPS and energy storage systems
- Battery formation instrument
- PV MPPT and inverters
- EV Chargers
- Welding...