Datasheet Summary
Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
Features
Order code SCTW60N120G2AG
VDS 1200 V
RDS(on) typ. 45 mΩ
ID 52 A
HiP247
D(2, TAB)
G(1) S(3)
3 2 1
- AEC-Q101 qualified
- High speed switching performance
- Very fast and robust intrinsic body diode
- Low capacitances
- Very high operating junction temperature capability (TJ = 200 °C)
Applications
- DC-DC converters
- Solar Inverters and renewable energy
- SMPS
- OBC
AM01475v1_noZen
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed...