STMicroelectronics SCTW60N120G2AG
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.| Part No. | SCTW60N120G2AG |
|---|---|
| Datasheet | SCTW60N120G2AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code SCTW60N120G2AG VDS 1200 V RDS(on) typ. 45 mΩ ID 52 A HiP247 D(2, TAB) G(1) S(3) 3 2 1● AEC-Q101 qualified
● High speed switching performance
● Very fast and robust intrinsic body diode
● Low capacitances
● Very high operating junction temperature capability (TJ = 200 °C)
APPLICATIONS
● DC-DC converters● Solar Inverters and renewable energy
● SMPS
● OBC AM01475v1_noZen
DESCRIPTION
The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCTW60N120G2AG Product summary Order code SCTW60N120G2AG Marking SCT60N120G2AG Package HiP247 Packing Tube DS13347 - Rev 1 - May 2020 For further information contact your local STMicroelectronics sales office. SCTW60N120G2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Param...
