SCTW60N120G2AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCTW60N120G2AG
Manufacturer	STMicroelectronics
File Size	192.35 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTW60N120G2AG Datasheet

General Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability.

Overview

SCTW60N120G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ.

Key Features

Order code SCTW60N120G2AG VDS 1200 V RDS(on) typ. 45 mΩ ID 52 A HiP247 D(2, TAB) G(1) S(3) 3 2 1.
AEC-Q101 qualified.
High speed switching performance.
Very fast and robust intrinsic body diode.
Low capacitances.
Very high operating junction temperature capability (TJ = 200 °C).

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