SCTW60N120G2AG - Automotive-grade silicon carbide Power MOSFET

Product Overview

STMicroelectronics

Part number	SCTW60N120G2AG
Manufacturer	STMicroelectronics
File Size	192.35 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTW60N120G2AG Datasheet
Additional preview pages of the SCTW60N120G2AG datasheet.

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

Order code SCTW60N120G2AG VDS 1200 V RDS(on) typ. 45 mΩ ID 52 A HiP247 D(2, TAB) G(1) S(3) 3 2 1.
AEC-Q101 qualified.
High speed switching performance.
Very fast and robust intrinsic body diode.
Low capacitances.
Very high operating junction temperature capability (TJ = 200 °C).

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Published: Mar 1, 2023 |