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SCTW60N120G2

Manufacturer: STMicroelectronics
SCTW60N120G2 datasheet preview

Datasheet Details

Part number SCTW60N120G2
Datasheet SCTW60N120G2-STMicroelectronics.pdf
File Size 196.37 KB
Manufacturer STMicroelectronics
Description Silicon carbide Power MOSFET
SCTW60N120G2 page 2 SCTW60N120G2 page 3

SCTW60N120G2 Overview

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTW60N120G2 Key Features

  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)
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