Datasheet Summary
Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247 package
HiP247
3 2 1
D(2, TAB)
Features
Order code
RDS(on) max.
1200 V
52 mΩ
60 A
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
Applications
- Switching mode power supply
- DC-DC converters
- Industrial motor control
G(1) S(3)
AM01475v1_noZen
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device Features remarkably low on-resistance per unit area and...