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SCTW60N120G2 - Silicon carbide Power MOSFET

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General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

Overview

SCTW60N120G2 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mΩ typ.

Key Features

  • Order code VDS RDS(on) max. ID SCTW60N120G2 1200 V 52 mΩ 60 A.
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitance.
  • Very high operating junction temperature capability (TJ = 200 °C).

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