Overview: Silicon Carbide Schottky Rectifier Bridge
in ISOPLUS i4-PACTM Advanced Technical Information FBS 16-06SC VRRM = 600 V ID(AV)M = 11 A Cjunction = 21 pF 1 5 Rectifier Bridge Symbol
VRRM
IFAV ID(AV)M IFSM
Ptot Conditions TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz TC = 25°C (per diode) Maximum Ratings
600 V
5A 11 A 20 A
27 W Symbol
VF
I
R
CJ RthJC RthJS Conditions IF = 6 A;
V =V ; R RRM
VR = 400 V; (per diode) TVJ = 25°C TVJ = 125°C
TVJ = 25°C TVJ = 125°C
TVJ = 125°C Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
1.5 1.8 V 1.6 V
0.2 mA 0.05 mA
21 pF
5.6 K/W 8.