FBS10-12SC Description
Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PACTM Advanced Technical Information FBS 10-12SC VRRM = 1200 V ID(AV)M = 7 A 1 4 51 25 Rectifier Bridge Symbol VRRM IFAV ID(AV)M IFSM Ptot Conditions TC = 90°C; sine 180° (per diode) TC = 90°C (bridge) TVJ = 25°C; sine 50 Hz TC = 25°C (per diode) Maximum Ratings 1200 V 3A 7A 12 A 37 W Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise...
FBS10-12SC Key Features
- Silicon Carbide Schottky Diodes
- no reverse recovery at turn off
- only charge of junction capacity
- soft turn off waveform
- no forward recovery at turn on
- switching behaviour independent of temperature
- low leakage current
- ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins and heatsink