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FBS10-12SC Datasheet Silicon Carbide Schottky Rectifier Bridge

Manufacturer: IXYS (now Littelfuse)

Overview: Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PACTM Advanced Technical Information FBS 10-12SC VRRM = 1200 V ID(AV)M = 7 A 1 4 51 25 Rectifier Bridge Symbol VRRM IFAV ID(AV)M IFSM Ptot Conditions TC = 90°C; sine 180° (per diode) TC = 90°C (bridge) TVJ = 25°C; t = 10 ms; sine 50 Hz TC = 25°C (per diode) Maximum Ratings 1200 V 3A 7A 12 A 37 W Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. VF IR RthJC RthJS IF = 4 A; TVJ = 25°C TVJ = 125°C VR = VRRM; TVJ = 25°C TVJ = 125°C (per diode) 1.7 2.1 V 2.4 V 0.2 mA 0.04 mA 4.1 K/W 6.2 K/W Data according to IEC 60747 referring to a single diode unless otherwise stated.

Key Features

  • Silicon Carbide Schottky Diodes - no reverse recovery at turn off - only charge of junction capacity - soft turn off waveform - no forward recovery at turn on - switching behaviour independent of temperature - low leakage current.

More Datasheets from IXYS (now Littelfuse)

Part Number Description
FBS10-06SC Silicon Carbide Schottky Rectifier Bridge
FBS16-06SC Silicon Carbide Schottky Rectifier Bridge

FBS10-12SC Distributor