Overview: Advanced Technical Information FBS 10-06SC Silicon Carbide Schottky Rectifier Bridge
in ISOPLUS i4-PAC™ VRRM = 600 V IdAVM = 6.6 A Cjunction = 9 pF 1 4 5 1 5 2 Rectifier Bridge Symbol Conditions VRRM IFAV ID(AV)M IFSM Ptot TC = 90°C; sine 180° (per diode) TC = 90°C TC = 25°C; t = 10 ms; sine 50 Hz TC = 25°C (per diode) Maximum Ratings
600 V
3A 6.6 A 12 A
19 W Symbol Conditions VF
IR
CJ RthJC RthJS IF = 4 A VR = VRRM VR = 400 V Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max. TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C TVJ = 125°C (per diode) 1.7 2.0 1.9 V V 0.2 mA 0.04 mA 9 pF 8 K/W 11.