SCTWA40N120G2AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCTWA40N120G2AG
Manufacturer	STMicroelectronics
File Size	252.97 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTWA40N120G2AG Datasheet

General Description

S(3) This silicon carbide Power MOSFET device has been developed using ST’s AM01475v1_noZen advanced and innovative 2nd generation SiC MOSFET technology.

The device

Overview

SCTWA40N120G2AG Datasheet Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ.

Key Features

Order code SCTWA40N120G2AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247 long leads D(2, TAB) G(1).
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

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