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SCTWA40N120G2V-4

Manufacturer: STMicroelectronics

SCTWA40N120G2V-4 datasheet preview

Datasheet Details

Part number	SCTWA40N120G2V-4
Datasheet	SCTWA40N120G2V-4-STMicroelectronics.pdf
File Size	197.61 KB
Manufacturer	STMicroelectronics
Description	Silicon carbide Power MOSFET

SCTWA40N120G2V-4 Overview

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTWA40N120G2V-4 Key Features

Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency

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