STMicroelectronics SCTWA40N120G2V
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.| Part No. | SCTWA40N120G2V |
|---|---|
| Datasheet | SCTWA40N120G2V Download |
| Manufacturer |  STMicroelectronics |
| Description | Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID SCTWA40N120G2V 1200 V 100 mΩ 36 A● Very fast and robust intrinsic body diode
● Extremely low gate charge and input capacitance
● Very high operating junction temperature capability (TJ = 200 °C)
APPLICATIONS
● Switching mode power supply● DC-DC converters
● Industrial motor control G(1) S(3) AM01475v1_noZen
DESCRIPTION
The variation of switching loss is almost independent of junction temperature. Product status link SCTWA40N120G2V Product summary Order code SCTWA40N120G2V Marking SCT40N120G2V Package HiP247 long leads Packing Tube DS13752 - Rev 2 - July 2021 For further information contact your local STMicroelectronics sales office. SCTWA40N120G2V Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operational values) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
