Description
D V+ G1 K1 Mid CAB530M12BM3, C CAB530M12BM3T 1200 V, 530 A All-Silicon Carbide, Half-Bridge Module Technical .
Features
* Industry Standard 62 mm Footprint
* Ultra Low Loss, High-Frequency Operation
B
* Zero Turn-off Tail Current from MOSFET
* Normally-off, Fail-safe Device Operation
* Copper Baseplate and Aluminum Nitride Insulator
G2
VDS K2
IDS
1200 V V5- 30 A
3
4
Applications
* System BAenefits
* Railway & Traction
* Lightweight, Compact Form-Factor with 62 mm-
* EV Charging Infrastructure
Format Enables System Retrofit
* Industrial Automation & Testing
* Increased System Efficiency due to Low Switching &
* High-Frequ