CSD01060A - 1A Silicon Carbide Schottky Diode
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.
SiC diodes can be easily paralleled to meet various applica
CSD01060A Features
* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
* Zero Reverse Recovery Current / Forward Recovery Voltage
* Temperature-Independent Switching Behavior Package Types: TO-220-2 Marking: CSD01060A Applications
* Industrial Switched Mode Power Supp
