CSD01N650 - N-Channel Trench Power MOSFET

General Description

The CSD01N650 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for power switching application and LED backlighting.

Key Features

VDS=100V; ID=11A RDS(ON).

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CSD01N650 n-channel trench power mosfet by CASS - Datasheet Preview

Datasheet Details

Part number	CSD01N650
Manufacturer	CASS
File Size	654.34 KB
Description	N-Channel Trench Power MOSFET
Datasheet	CSD01N650 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Trench Power MOSFET General Description The CSD01N650 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features ● VDS=100V; ID=11A RDS(ON)<140mΩ @ VGS=10V (Typ:90mΩ) ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Power switching application ● LED backlighting CSD01N650 To-252 Top View Schematic Diagram VDS =100V ID = 11A RDS(ON)= 90mΩ Package Marking and Ordering Information Device Marking Device Device Package CSD01N650 CSD01N650 TO-252 Reel Size - Table 1.