CSD01N650 Description
The CSD01N650 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting.
CSD01N650 Key Features
- VDS=100V; ID=11A RDS(ON)<140mΩ @ VGS=10V (Typ:90mΩ)
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
- Power switching application
- LED backlighting
- Table 1