CASS CSD01N650
The CSD01N650 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting.| Part No. | CSD01N650 |
|---|---|
| Datasheet | CSD01N650 Download |
| Manufacturer | CASS |
| Description | N-Channel Trench Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● VDS=100V; ID=11A RDS(ON)<140mΩ @ VGS=10V (Typ:90mΩ)● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● Power switching application
● LED backlighting CSD01N650 To-252 Top View Schematic Diagram VDS =100V ID = 11A RDS(ON)= 90mΩ Package Marking and Ordering Information Device Marking Device Device Package CSD01N650 CSD01N650 TO-252 Reel Size - Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) PD EAS Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) Single Pulse Avalanche Energy (Note
