CSD01N650
CSD01N650 is N-Channel Trench Power MOSFET manufactured by CASS.
Description
The CSD01N650 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting.
Features
- VDS=100V; ID=11A RDS(ON)<140mΩ @ VGS=10V (Typ:90mΩ)
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
Application
- Power switching application
- LED backlighting
To-252 Top View
Schematic Diagram
VDS =100V ID = 11A
RDS(ON)= 90mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-252
Reel Size
- Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC) ID (DC) IDM (pluse) PD EAS
Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) Single Pulse Avalanche Energy...
