CSD30N210
CSD30N210 is N-Channel Trench Power MOSFET manufactured by CASS.
Description
The CSD30N210 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.
Features
- VDS = 30V,ID =23A RDS(ON) < 32mΩ @ VGS =10V RDS(ON) < 45mΩ @ VGS =4.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- PWM applications
- Load switch
- Power management
100% UIS TESTED! 100% ΔVds TESTED!
Schematic Diagram Marking and pin Assignment
TO-252(DPAK) top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-252
Reel Size 325mm
Tape width 16mm
Quantity 2500
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V）
VGS ID IDM (pluse) PD EAS
Gate-Source Voltage (VDS=0V)
Drain Current-Continuous(Tc=25℃) (Note...
