CSD20N45 - N-Channel Trench Power MOSFET

General Description

The CSD20N45 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a wide variety of applications.

Key Features

VDS = 20V,ID =85A RDS(ON) < 5.5mΩ @ VGS =4.5V RDS(ON) < 9mΩ @ VGS =2.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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CSD20N45 n-channel trench power mosfet by CASS - Datasheet Preview

Datasheet Details

Part number	CSD20N45
Manufacturer	CASS
File Size	788.46 KB
Description	N-Channel Trench Power MOSFET
Datasheet	CSD20N45 Datasheet

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N-Channel Trench Power MOSFET CSD20N45 General Description The CSD20N45 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 20V,ID =85A RDS(ON) < 5.5mΩ @ VGS =4.5V RDS(ON) < 9mΩ @ VGS =2.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery Protection ● Load switch ● Power management 100% UIS TESTED! 100% ΔVds TESTED! Schematic Diagram Marking and pin Assignment TO-252(DPAK) top view Package Marking and Ordering Information Device Marking Device Device Package CSD20N45 CSD20N45 TO-252 Reel Size 325mm Tape width 16mm Quantity 2500 Table 1.