E4M0013120K Silicon Carbide Power MOSFET

Wolfspeed

E4M0013120K Description

E4M0013120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode .

E4M0013120K Features

* Package
* E4M generation SiC MOSFET technology Tab
* Optimized package with separate driver source pin Drain
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low cap

E4M0013120K Applications

* Motor Control
* EV Battery Chargers
* High Voltage DC/DC Converters Part Number E4M0013120K Package TO-247-4L Marking E4M0013120K Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol VDSmax VGSmax Drain - Source Voltage Gate - Source Voltage Parameter I

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Datasheet Details

Part number: E4M0013120K
Manufacturer: Wolfspeed
File Size: 1.15 MB
Datasheet: E4M0013120K-Wolfspeed.pdf
Description: Silicon Carbide Power MOSFET

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