E4M0025075J2 - Silicon Carbide Power MOSFET

Wolfspeed

Key Features

Package.
750V SiC MOSFET technology Tab.
Optimized package with separate driver source pin Drain.
4.7mm of creepage distance between drain and source.
High blocking voltage with low on-resistance.
High-speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant.
Automotive Qualified (AEC-Q101) and PPAP Capable Drain Benefits 1234567 (TAB).

E4M0025075J2 silicon carbide power mosfet by Wolfspeed - Datasheet Preview

Datasheet Details

Part number	E4M0025075J2
Manufacturer	Wolfspeed
File Size	1.24 MB
Description	Silicon Carbide Power MOSFET
Datasheet	E4M0025075J2 Datasheet

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Full PDF Text Transcription (Reference)

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E4M0025075J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 750V SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 4.