Datasheet4U.com

E4M0025075J2 - Silicon Carbide Power MOSFET

Wolfspeed

📥 Download Datasheet

E4M0025075J2 Datasheet Preview — Preview of E4M0025075J2 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	E4M0025075J2
Manufacturer	Wolfspeed
File Size	1.24 MB
Description	Silicon Carbide Power MOSFET
Datasheet	E4M0025075J2-Wolfspeed.pdf

E4M0025075J2 Product details

Features

Package.
750V SiC MOSFET technology Tab.
Optimized package with separate driver source pin Drain.
4.7mm of creepage distance between drain and source.
High blocking voltage with low on-resistance.
High-speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant.
Automotive Qualified (AEC-Q101) and PPAP Capable Drain Benefits 1234567 (TAB).

📁 E4M0025075J2 Similar Datasheet

Other Datasheets by Wolfspeed

E4M0025075K1 - Silicon Carbide Power MOSFET
E4M0013120K - Silicon Carbide Power MOSFET
E4M0015075J2 - Silicon Carbide Power MOSFET
E4M0015075K1 - Silicon Carbide Power MOSFET
E4M0045075J2 - Silicon Carbide Power MOSFET
E4M0045075K1 - Silicon Carbide Power MOSFET

Published: Aug 3, 2024 |