WSGPA01 - GaN on SiC General Purpose Power Amplifier

Datasheet Summary

Description

The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz.

The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W.

It is housed in a 3 mm X 4 mm DFN package.

Features

GaN on SiC HEMT technology.
Operating frequency : up to 5 GHz.
P3dB : up to 10 W.
Supply voltage : up to 50 V.
Maximum junction temperature : 225 °C.
Pb-free and RoHS compliant WSGPA01 Package PG-DFN-3x4-1 RF Performance Typical Single-carrier WCDMA Performance (tested in Wolfspeed test fixture) VDD = 48 V, IDQ = 25 mA, POUT = 26.5 dBm, channel bandwidth = 3.84 MHz, input PAR = 10 dB @ 0.01% CCDF Frequency POUT Gain Efficiency ACPR.

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Datasheet Details

Part number	WSGPA01
Manufacturer	Wolfspeed
File Size	706.39 KB
Description	GaN on SiC General Purpose Power Amplifier
Datasheet	WSGPA01 Datasheet
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WSGPA01 10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier Description The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastructure applications with crest factor reduced and digitally pre-distorted LTE or 5G NR signals, it may be suitable for other applications at frequencies up to 5 GHz, restricted only by its maximum operating conditions.

Published: Jun 25, 2023 |