XP2906EY N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP2906EY Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Capable of 2.5V Gate Drive ▼ Surface mount package ▼ RoHS.
XP2906 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP2906EY
Manufacturer: YAGEO
File Size: 197.11 KB
Datasheet: XP2906EY-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SOT-26 package is widely used for all commercialindustrial applications. D1/D2 G1 G2 S1 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Curr

XP2906EY Distributors

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XP2906EY N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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