XP3N035N N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP3N035N Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive D ▼ Lower Gate Charge ▼ Fast Switching Performanc.
XP3N035 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP3N035N
Manufacturer: YAGEO
File Size: 153.31 KB
Datasheet: XP3N035N-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID G 30V 35mΩ 4.5A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS

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XP3N035N N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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