XP3N9R5AM N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP3N9R5AM Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characterist.
XP3N9R5A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP3N9R5AM
Manufacturer: YAGEO
File Size: 208.95 KB
Datasheet: XP3N9R5AM-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID3 G 30V 9.5mΩ 12.5A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol P

XP3N9R5AM Distributors

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XP3N9R5AM N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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