XP3NA4R2AYT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP3NA4R2AYT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Size & Ultra_Low RDS(ON) ▼ RoHS Comp.
XP3NA4R2A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP3NA4R2AYT
Manufacturer: YAGEO
File Size: 251.79 KB
Datasheet: XP3NA4R2AYT-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The PMPAK ® 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. BVDSS RDS(ON) 30V 4.2mΩ D D D D S S S G PMPAK® 3 x 3 Absolute Maximum Ratings@Tj=25oC(unless otherwise specifi

XP3NA4R2AYT Distributors

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XP3NA4R2AYT N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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