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YMP230N55 N-Channel Enhancement Mode Power MOSFET

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Description

YMP230N55 N-Channel Enhancement Mode Power MOSFET Product Summary BVDSS RDS(ON) typ.typ.max.ID 55 2 3 230 V mΩ mΩ A General .
The YMP230N55 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
YMP230N55
Manufacturer
YM
File Size
1.68 MB
Datasheet
YMP230N55-YM.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS=55V;ID=230A@ V GS =10V; RDS(ON)< 3 mΩ @ VGS =10V
* Special process technology for high ESD capability
* Special designed for Convertors and power controls
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability

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