* . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to5200 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) DCR1180F
DCR1180F Datasheet (167.53 KB)
DCR1180F
YZPST
167.53 KB
High power thyristor.
Technical Data : CD-031
Page 1 of 4
PST
D C R 1 1 8 0 F - Power Thyristor
5200VDRM; 1180 A rms
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