MUR30120PL Datasheet - Yangzhou Yangjie

Ultra-Fast Recovery Diode

* High frequency operation

* High surge forward current capability

* High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

* Guard ring for enhanced ruggedness and long term reliability

* Solder dip 275 °C max. 7 s, per JESD 22

MUR30120PL

Yangzhou Yangjie

265.55 KB

Ultra-fast recovery diode.

📁 Related Datasheet

MUR30120PT Ultrafast Rectifier (INCHANGE)

MUR30120PT Ultra Fast Recovery Diodes (Sirectifier)

MUR30120 Ultra Fast Recovery Diodes (Sirectifier)

MUR30120 Ultrafast Recovery Rectifier (Inchange Semiconductor)

MUR30120CT Fast Recovery Rectifier (Inchange Semiconductor)

MUR30120L Ultra-Fast Recovery Diode (Yangzhou Yangjie)

MUR3010 30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes (Thinki Semiconductor)

MUR3010CT ULTRA FAST RECTIFIER (MIC)

MUR3010CT ULTRA FSAT RECTlFIER (KI SEMICONDUCTOR)

MUR3010GD 30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes (Thinki Semiconductor)

TAGS

MUR30120PL Ultra-Fast Recovery Diode Yangzhou Yangjie

Image Gallery