FMMV3102 - SILICON PLANAR VARIABLE CAPACITANCE DIODE
SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 3 JANUARY 1998 PIN CONFIGURATION 1 PARTMARKING DETAIL FMMV3102 4C FMMV3102 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS.
PARAMETER Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL Ptot Tj:Tstg VALUE 330 -55 to +150 UNIT mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
Reverse Breakdown VBR 30 Voltage V IR = 10µA
