Datasheet4U Logo Datasheet4U.com

FMMV109 - SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE

📥 Download Datasheet

Datasheet preview – FMMV109

📁 Similar Datasheet

  • FMMV2101 - SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES (ETC)
  • FMMV2109 - SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES (ETC)
  • FMM-22R - Silicon Diode (Sanken)
  • FMM-22S - Silicon Diode (Sanken)
  • FMM-24R - Rectifier Diodes (Sanken electric)
  • FMM-24S - Rectifier Diodes (Sanken electric)
  • FMM-26R - Rectifier Diodes (Sanken electric)
  • FMM-26S - Rectifier Diodes (Sanken electric)
  • FMM-31R - Rectifier Diodes (Sanken electric)
  • FMM-31S - Rectifier Diodes (Sanken electric)
Other Datasheets by Zetex Semiconductors
  • FMMV105G - SILICON PLANAR VARIABLE CAPACITANCE DIODE
  • FMMV3102 - SILICON PLANAR VARIABLE CAPACITANCE DIODE
  • FMMD2838 - SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR
  • FMMD6100 - SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR
  • FMMD7000 - SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE
  • FMMT38 - NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
  • FMMT38A - NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
  • FMMT38B - NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

Full PDF Text Transcription

Click to expand full text
SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 – JANUARY 1998 PIN CONFIGURATION 1 PARTMARKING DETAIL FMMV109 – 4A FMMV109 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL Ptot Tj:Tstg VALUE 330 -55 to +150 UNIT mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Reverse Breakdown VBR 30 Voltage V IR = 10µA Reverse current IR Series Inductance LS Diode Capacitance TCC Temperature Coefficient 10 3.0 280 nA VR = 25V nH f=250MHz ppm/ °C VR = 3V, f=1MHz Case Capacitance CC 0.1 pF f=1MHz TUNING CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Published: |