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FMMV105G - SILICON PLANAR VARIABLE CAPACITANCE DIODE

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Datasheet Details

Part number FMMV105G
Manufacturer Zetex Semiconductors
File Size 35.46 KB
Description SILICON PLANAR VARIABLE CAPACITANCE DIODE
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SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 – JANUARY 1998 PIN CONFIGURATION 1 PARTMARKING DETAILS FMMV105G – 4EZ FMMV105G 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL Ptot Tj:Tstg VALUE 330 -55 to +150 UNIT mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Reverse Breakdown VBR 30 Voltage V IR = 10µA Reverse current IR Series Inductance LS Diode Capacitance TCC Temperature Coefficient 10 3.0 280 nA VR = 28V nH f=250MHz ppm/ °C VR = 3V, f=1MHz TUNING CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Diode Capacitance Capacitance Ratio Figure of MERIT Cd 1.
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