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FMMV3102 - SILICON PLANAR VARIABLE CAPACITANCE DIODE

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Part number FMMV3102
Manufacturer Zetex Semiconductors
File Size 35.61 KB
Description SILICON PLANAR VARIABLE CAPACITANCE DIODE
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SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 3 – JANUARY 1998 PIN CONFIGURATION 1 PARTMARKING DETAIL FMMV3102 – 4C FMMV3102 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL Ptot Tj:Tstg VALUE 330 -55 to +150 UNIT mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Reverse Breakdown VBR 30 Voltage V IR = 10µA Reverse current IR Series Inductance LS Diode Capacitance TCC Temperature Coefficient 10 3.0 280 nA VR = 25V nH f=250MHz ppm/ °C VR = 3V, f=1MHz Case Capacitance CC 0.1 pF f=1MHz TUNING CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
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