Part number:
ZXM64N035G
Manufacturer:
Zetex Semiconductors
File Size:
101.66 KB
Description:
35v n-channel mosfet.
* Low on-resistance
* Fast switching speed
* Low threshold
* Low gate drive
* SOT223 package APPLICATIONS
* 50W Class D Audio Output Stage
* Motor Control ORDERING INFORMATION DEVICE ZXM64N035GTA ZXM64N035GTC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000
ZXM64N035G Datasheet (101.66 KB)
ZXM64N035G
Zetex Semiconductors
101.66 KB
35v n-channel mosfet.
📁 Related Datasheet
ZXM64N035L3 - 35V N-CHANNEL MOSFET
(Zetex Semiconductors)
ZXM64N035L3
35V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 35V: RDS(on) = 0.060 : ID = 13A
DESCRIPTION
This new generation of high cell de.
ZXM64N03X - 30V N-Channel MOSFET
(Zetex Semiconductors)
ZXM64N03X
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=30V; RDS(ON)=0.045⍀; ID=5.0A
DESCRIPTION This new generation of high density MOSFETs.
ZXM64N02X - 20V N-CHANNEL MOSFET
(Zetex Semiconductors)
ZXM64N02X
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=20V; RDS(ON)=0.040Ω; ID=5.4A
DESCRIPTION This new generation of high density MOSFETs.
ZXM64NO3X - HIGH EFFICIENCY SIMPLESYNC PWM DC-DC CONTROLLERS
(Zetex Semiconductors)
ZXRD1000 SERIES
HIGH EFFICIENCY SIMPLESYNC PWM DC-DC CONTROLLERS
DESCRIPTION The ZXRD1000 series provides plete control and protection functions .
ZXM64P02X - 20V P-CHANNEL MOSFET
(Zetex Semiconductors)
ZXM64P02X
20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=-20V; RDS(ON)=0.090⍀; ID= -3.5A
DESCRIPTION This new generation of high density MOSF.
ZXM64P03 - 35V P-CHANNEL MOSFET
(Zetex Semiconductors)
ZXM64P035L3
35V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12A
DESCRIPTION
This new generation of high cell .
ZXM64P035 - 35V P-CHANNEL MOSFET
(Zetex Semiconductors)
ZXM64P035L3
35V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12A
DESCRIPTION
This new generation of high cell .
ZXM64P035G - 35V P-CHANNEL MOSFET
(Zetex Semiconductors)
ZXM64P035G
35V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -5.3A
DESCRIPTION
This new generation of high cell .