Description
ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V(BR)DSS 30 RDS(on) (Ω) 0.028 @ VGS= 10V 0.045 @ VGS= 4.5V ID (A) 7.1 5.6 Desc.
This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed.
Low on-resistance.
4.
Features
* low onresistance and fast switching speed. Features
* Low on-resistance
* 4.5V gate drive capability
Applications
* DC-DC Converters
* Power management functions
* Motor Control
* Backlighting
Ordering information
DEVICE ZXMN3G32DN8TA
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
500
S1
S1 G1 S2 G2
Device marking
ZXMN 3G32D
G2
D2
S2
D1 D1 D2 D2
Issue 1 - Jan