ZXMN6A25DN8
Zetex Semiconductors
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Dual 60v n-channel mosfet. ; ID= 4.7A This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resist
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ZXMN6A25G - N-Channel MOSFET
(Zetex Semiconductors)
ZXMN6A25G 60V SOT223 N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60 RDS(on) (⍀) 0.050 @ VGS = 10V 0.070 @ VGS = 4.5V ID (A) 6.7 5.7
Descriptio.
ZXMN6A25G - 60V SOT223 N-channel enhancement mode MOSFET
(Diodes)
ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION
Green ZXMN6A25G
60V SOT223 N-channel enhancement mode MOSFET
Product Summary
BVDSS 60V
RDS(on) max
50mΩ @ V.
ZXMN6A25K - N-Channel MOSFET
(Zetex Semiconductors)
ZXMN6A25K 60V DPAK N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60 0.070 @ VGS= 4.5V 9 RDS(on) (⍀) 0.050 @ VGS= 10V ID (A) 10.7
Description
Thi.
ZXMN6A25N8 - 60V SO8 N-channel MOSFET
(Zetex Semiconductors)
ZXMN6A25N8 60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60
RDS(on) (Ω) 0.050 @ VGS=10V 0.070 @ VGS=4.5V
ID(A) 7.0
Description This .
ZXMN6A25N8TA - 60V SO8 N-channel MOSFET
(Zetex Semiconductors)
ZXMN6A25N8 60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60
RDS(on) (Ω) 0.050 @ VGS=10V 0.070 @ VGS=4.5V
ID(A) 7.0
Description This .
ZXMN6A07F - 60V N-CHANNEL MOSFET
(Diodes)
ZXMN6A07F
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
Max RDS(ON)
250mΩ @ VGS = 10V 350mΩ @ VGS = 4.5V
Max ID TA = +25°C
(Note.
ZXMN6A07Z - 60V N-Channel MOSFET
(Zetex Semiconductors)
ZXMN6A07Z
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS= 100V; RDS(ON)= 0.4
ID= 1.9A
DESCRIPTION
This new generation of TRENCH MOSFETs fro.
ZXMN6A07ZTA - N-Channel MOSFET
(VBsemi)
ZXMN6A07ZTA
.VBsemi.
ZXMN6A07ZTA N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.076 at VGS = 10 V 60
0.088 at VGS = 4.5.
ZXMN6A08E6 - 60V N-Channel MOSFET
(Zetex Semiconductors)
ZXMN6A08E6
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS= 60V; RDS(ON)= 0.100
ID= 3.0A
DESCRIPTION
This new generation of TRENCH MOSFETs f.
ZXMN6A08E6 - 60V N-Channel MOSFET
(DIODES)
ADVANCE INFORMATION
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Product Summary
V(BR)DSS 60V
RDS(ON)
80mΩ @ VGS=10V 150mΩ @ VGS=4.5V
ID TA = +25°C
3.5A 2.5A
Description
This MOSFET is de.
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