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ANP4N60B - N-Chanel Power MOSFET

Datasheet Summary

Features

  • Low Qg Low Rdson RoHS compliant 1 Gate 2 Drain 3 Source Table 1. Device summary Part numbers ANA4N60B ANP4N60B ANB4N60B AND4N60B ANI4N60B ANU4N60B Marking A4N60B P4N60B B4N60B D4N60B I4N60B U4N60B Package TO-220FP TO-220 D²PAK DPAK I PAK IPAK Value TO-220FP TO-220 D²PAK I2PAK DPAK IPAK 2 Packaging Tube Tube Tape and reel Tape and reel Tube Tube Units Table 2. Absolute Maximum Ratings Symbol ID ID IDM(1) VGS PD Parameter Drain current (continuous), VGS= at TC = 25°C Drain current (continuous),.

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Datasheet Details

Part number ANP4N60B
Manufacturer angstrem
File Size 1.02 MB
Description N-Chanel Power MOSFET
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N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications      SMPS PFC Features Low Qg Low Rdson RoHS compliant 1 Gate 2 Drain 3 Source Table 1. Device summary Part numbers ANA4N60B ANP4N60B ANB4N60B AND4N60B ANI4N60B ANU4N60B Marking A4N60B P4N60B B4N60B D4N60B I4N60B U4N60B Package TO-220FP TO-220 D²PAK DPAK I PAK IPAK Value TO-220FP TO-220 D²PAK I2PAK DPAK IPAK 2 Packaging Tube Tube Tape and reel Tape and reel Tube Tube Units Table 2.
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